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Description
Apr 1, 2010 To our customers,. Old Company Name in Catalogs and Other Documents. On April 1st, 2010, NEC Electronics Corporation merged with 2010 4 1 . . 2010 4 1 NEC . 2SA812 -M4. PNP Silicon. Epitaxial Transistors. Features. High DC Current Gain: 90 hFE 600.(VCE=-6.0V, IC=-1mA). High voltage: VCEO=-50V. Maximum 2010 4 1 2SC1623A. 2SD596A. MOS FET. 2SJ461A. 2SK2158A. QN7002. A . 2SA812A-T1B-AT/JM. 2SA812 -T1B-A/JM. S Bi. R8C/33A . R8C/LAPS . POR *1. . . EEPROM. R1EX24xxx . R1EX25xxx . . . LCD. 2SA812 /2SC1623
| Part Number | 2SA812 |
| Brand | Renesas |
| Image |  |
2SA812
RENRSAS
5000000
1.4
Hongkong Shengshi Electronics Limited
2SA812
rene
30522
2.3525
Sino Star Electronics (HK) Co.,Limited
2SA812
ren
90000
3.305
Belt (HK) Electronics Co
2SA812
RENESA
13000
4.2575
Cicotex Electronics (HK) Limited
2SA812
RENESAS/NEC
38000
5.21
Yingxinyuan INT'L (Group) Limited
