Part Number | 2SC3356-T1B-R25-A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | Renesas |
Description | SAME AS NE85633 NPN SILICON AMPL |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 7GHz |
Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
Gain | 11.5dB |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 |
Image |
2SC3356-T1B-R25-A
RENRSAS
6345
1.5
Dedicate Electronics (HK) Limited
2SC3356T1BR25A
rene
30050
2.2
ChipStk Electronics Pte.
2SC3356T1BR25A
ren
30000
2.9
Xinnlinx Electronics Pte
2SC3356-T1B-R25-A
RENESA
602667
3.6
TERNARY UNION CO., LIMITED
2SC3356-T1B-R25-A
RENESAS/NEC
20000
4.3
Ande Electronics Co., Limited