Part Number | 2SC3357-T1-RF-A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | Renesas |
Description | SAME AS NE85634 NPN SILICON MEDI |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 6.5GHz |
Noise Figure (dB Typ @ f) | 1.8dB @ 1GHz |
Gain | 10dB |
Power - Max | 1.2W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Supplier Device Package | SOT-89 |
Image |
2SC3357-T1-RF-A
RENRSAS
1136
0.34
Ande Electronics Co., Limited
2SC3355
rene
2434
1.48
RX ELECTRONICS LIMITED
2SC3354
ren
950
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Yingxinyuan INT'L (Group) Limited
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RENESA
9933
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HK TWO L ELECTRONIC LIMITED
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RENESAS/NEC
3430
4.9
Pacific Corporation