Renesas

Description

The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. FEATURES. * Low frequency power amplifier. 2SD667 . 60. 320. hFE(1). VCE=5V,IC=150mA. 2SD667A. 60. 320. DC current gain. hFE(2). VCE=5V,IC=500mA. 30. Collector-emitter saturation voltage. 2SD667 . 80. V. Collector-emitter breakdown voltage. V(BR)CEO. IC=1mA,IB=0. 2SD667A. 100. V. Emitter-base breakdown voltage. V(BR)EBO. IE=10 A,IC=0. 5. Nov 16, 2012 Complementary Pair with 2SD667 . Epoxy meets UL 94 V-0 flammability rating. RthJA. Thermal Resistance Junction to Ambient. 167. oC/W. Complementary to 2SD667 . MAXIMUM RATINGS(TA=25 unless otherwise noted). ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise