Part Number | 2SJ162-E |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET P-CH 160V 7A TO-3P |
Series | - |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 160V |
Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Rds On (Max) @ Id, Vgs | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P |
Package / Case | TO-3P-3, SC-65-3 |
Image |
2SJ162-E
RENRSAS
3400
1.84
Bonase Electronics (HK) Co., Limited
2SJ162-E
rene
6519
2.6275
Belt (HK) Electronics Co
2SJ162-E
ren
36080
3.415
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
2SJ162-E
RENESA
1590
4.2025
WIN AND WIN ELECTRONICS LIMITED
2SJ162-E
RENESAS/NEC
2000
4.99
Hong Kong Borui Jintong Technology Co., Limited