Part Number | 2SK1859-E |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 900V 6A TO-3P |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 980pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 60W (Tc) |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 3A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P |
Package / Case | TO-3P-3, SC-65-3 |
Image |
2SK1859-E
RENRSAS
9186
0.5
Dedicate Electronics (HK) Limited
2SK1859-E
rene
409
1.69
HK HEQING ELECTRONICS LIMITED
2SK1859-E
ren
9965
2.88
Xinghuan International Trade Limited
2SK1859-E
RENESA
3773
4.07
ONSTAR ELECTRONICS CO., LIMITED
2SK1859-E
RENESAS/NEC
8760
5.26
Yingxinyuan INT'L (Group) Limited