Description
Jan 28, 2002 VGS. Gate-to-Source Voltage. 20. V. EAS. Single Pulse Avalanche Energy . 150. mJ. IAR. Avalanche Current . 34. A. EAR. Repetitive DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low
Part Number | 5N2307 |
Brand | Renesas |
Image |
5N2307
RENRSAS
6607
1.86
Dedicate Electronics (HK) Limited
5N2307
rene
8688
2.7425
KDH SEMICONDUCTOR CO., LIMITED
5N2307
ren
8688
3.625
Ande Electronics Co., Limited
5N2307
RENESA
6607
4.5075
Dedicate Electronics (HK) Limited
5N2307
RENESAS/NEC
323
5.39
JWD Electronic Co., Ltd