Part Number | 6116LA35TDB |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | Renesas |
Description | IC SRAM 16KBIT 35NS 24CDIP |
Series | - |
Packaging | Tray |
Memory Type | Volatile |
Memory Format | SRAM |
Technology | SRAM - Asynchronous |
Memory Size | 16Kb (2K x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 35ns |
Access Time | 35ns |
Memory Interface | Parallel |
Voltage - Supply | 4.5 V ~ 5.5 V |
Operating Temperature | -55°C ~ 125°C (TA) |
Mounting Type | Through Hole |
Package / Case | 24-CDIP (0.300", 7.62mm) |
Supplier Device Package | 24-CDIP |
Image |
6116LA35TDB
RENRSAS
9107
0.2
Finestock Electronics HK Limited
6116LA35TDB
rene
9308
1.0775
HONG KONG YUE JIN PENG ELECTRONICS CO.
6116LA35TDB
ren
6782
1.955
HongKong JDG Electronic Co., Limited
6116LA35TDB
RENESA
2181
2.8325
N&S Electronic Co., Limited
6116LA35TDB
RENESAS/NEC
7347
3.71
CIS Ltd (CHECK IC SOLUTION LIMITED)