Part Number | 70T633S10BCI |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | Renesas |
Description | IC SRAM 9MBIT 10NS 256CABGA |
Series | - |
Packaging | Tray |
Memory Type | Volatile |
Memory Format | SRAM |
Technology | SRAM - Dual Port, Asynchronous |
Memory Size | 9Mb (512K x 18) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 10ns |
Access Time | 10ns |
Memory Interface | Parallel |
Voltage - Supply | 2.4 V ~ 2.6 V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 256-LBGA |
Supplier Device Package | 256-CABGA (17x17) |
Image |
70T633S10BCI
RENRSAS
9761
0.82
Yu Hong Technologies Limited
70T633S10BCI
rene
8276
1.2925
HONG KONG YUE JIN PENG ELECTRONICS CO.
70T633S10BCI
ren
7095
1.765
Finestock Electronics HK Limited
70T633S10BCI
RENESA
9597
2.2375
Cinty Int'l (HK) Industry Co., Limited
70T633S10BCI
RENESAS/NEC
9543
2.71
HK Niuhuasi Technology Limited