Description
IC SRAM 9MBIT 12NS 256CABGA Series: - Format - Memory: RAM Memory Type: SRAM - Dual Port, Asynchronous Memory Size: 9M (512K x 18) Speed: 12ns Interface: Parallel Voltage - Supply: 2.4 V ~ 2.6 V Operating Temperature: -40~C ~ 85~C Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)
Part Number | 70T633S12BCI |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | Renesas |
Description | IC SRAM 9MBIT 12NS 256CABGA |
Series | - |
Packaging | Tray |
Memory Type | Volatile |
Memory Format | SRAM |
Technology | SRAM - Dual Port, Asynchronous |
Memory Size | 9Mb (512K x 18) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 12ns |
Access Time | 12ns |
Memory Interface | Parallel |
Voltage - Supply | 2.4 V ~ 2.6 V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 256-LBGA |
Supplier Device Package | 256-CABGA (17x17) |
Image |
70T633S12BCI
RENRSAS
5999
1.8
Huajiaxin Electronic Technology (Hong Kong) Co., Limited
70T633S12BCI
rene
5999
3.0125
Xinyihui Electronic Technology Limited
70T633S12BCI
ren
3000
4.225
HONG KONG YUE JIN PENG ELECTRONICS CO.
70T633S12BCI
RENESA
15000
5.4375
HongKong JDG Electronic Co., Limited
70T633S12BCI
RENESAS/NEC
15000
6.65
HK Niuhuasi Technology Limited