Description
IC SRAM 9MBIT 10NS 256CABGA Series: - Format - Memory: RAM Memory Type: SRAM - Dual Port, Asynchronous Memory Size: 9M (256K x 36) Speed: 10ns Interface: Parallel Voltage - Supply: 2.4 V ~ 2.6 V Operating Temperature: -40~C ~ 85~C Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)
Part Number | 70T651S10BCI |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | Renesas |
Description | IC SRAM 9MBIT 10NS 256CABGA |
Series | - |
Packaging | Tray |
Memory Type | Volatile |
Memory Format | SRAM |
Technology | SRAM - Dual Port, Asynchronous |
Memory Size | 9Mb (256K x 36) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 10ns |
Access Time | 10ns |
Memory Interface | Parallel |
Voltage - Supply | 2.4 V ~ 2.6 V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 256-LBGA |
Supplier Device Package | 256-CABGA (17x17) |
Image |
70T651S10BCI
RENRSAS
10336
0.13
Viassion Technology Co., Limited
70T651S10BCI
rene
3000
1.4425
HONG KONG YUE JIN PENG ELECTRONICS CO.
70T651S10BCI
ren
15000
2.755
HK Niuhuasi Technology Limited
70T651S10BCI
RENESA
5999
4.0675
Xinyihui Electronic Technology Limited
70T651S10BCI
RENESAS/NEC
15000
5.38
HongKong JDG Electronic Co., Limited