Part Number | FCB110N65F |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 650V 35A D2PAK |
Series | FRFET, SuperFET II |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 3.5mA |
Gate Charge (Qg) (Max) @ Vgs | 145nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4895pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 357W (Tc) |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 17.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
Hot Offer
FCB110N65F
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13100
3.03
Shenzhen Hongying Micro Technology Co., Ltd
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595
0.37
HK HEQING ELECTRONICS LIMITED
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rene
800
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Kang Da Electronics Co.
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44581
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N&S Electronic Co., Limited
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CIS Ltd (CHECK IC SOLUTION LIMITED)