Part Number | FDD6N20TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 200V 4.5A DPAK |
Series | UniFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.1nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Rds On (Max) @ Id, Vgs | 800 mOhm @ 2.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FDD6N20TM
RENRSAS
16000
0.45
Finestock Electronics HK Limited
FDD6N20TM
rene
55300
1.555
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDD6N20TM
ren
9000
2.66
SUMMER TECH(HK) LIMITED
FDD6N20TM
RENESA
34737
3.765
Ande Electronics Co., Limited
FDD6N20TM
RENESAS/NEC
24138
4.87
Yingxinyuan INT'L (Group) Limited