Description
Datasheet Apr 1, 2010 H7P1002DL, H7P1002DS . Silicon P Channel MOS FET. High Speed Power Switching. REJ03G1601-0100. Rev.1.00. Nov 16, 2007. Features. 2010 4 1 H7P1002DL, H7P1002DS . Rev.1.00 2005.12.14 page 2 of 8. . (Ta = 25 C). . . . . . VDSS. 50 2010 Renesas Electronics Corporation. All rights reserved. Nch 75V/100V Pch . 45. 2600. 105 / 150*. 85 / 105. 30. -15. -100. TO-252. H7P1002DS .
Part Number | H7P1002DS |
Brand | Renesas |
Image |
H7P1002DS
RENRSAS
5000000
0.71
Hongkong Shengshi Electronics Limited
H7P1002DS
rene
21100
1.74
N&S Electronic Co., Limited
H7P1002DS
ren
16000
2.77
CIS Ltd (CHECK IC SOLUTION LIMITED)
H7P1002DS**
RENESA
49800
3.8
N&S Electronic Co., Limited
H7P1002DS
RENESAS/NEC
20000
4.83
Redstar Electronic Limited