Part Number | IDT70P3517S233RMI |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | Renesas |
Description | IC SRAM 9MBIT 233MHZ 576FCBGA |
Series | - |
Packaging | Tray |
Memory Type | Volatile |
Memory Format | SRAM |
Technology | SRAM - Dual Port, Synchronous QDR II |
Memory Size | 9Mb (256K x 36) |
Clock Frequency | 233MHz |
Write Cycle Time - Word, Page | - |
Access Time | 7.2ns |
Memory Interface | Parallel |
Voltage - Supply | 1.7 V ~ 1.9 V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 576-BBGA, FCBGA |
Supplier Device Package | 576-FCBGA (25x25) |
Image |
IDT70P3517S233RMI
RENRSAS
4349
1.4
HK HEQING ELECTRONICS LIMITED
IDT70P3517S233RMI
rene
7803
2.455
HONG KONG YUE JIN PENG ELECTRONICS CO.
IDT70P3517S233RMI
ren
9133
3.51
Yu Hong Technologies Limited
IDT70P3517S233RMI
RENESA
1626
4.565
HongKong JDG Electronic Co., Limited
IDT70P3517S233RMI
RENESAS/NEC
9324
5.62
HK Niuhuasi Technology Limited