Part Number | IPD060N03LGATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 30V 50A TO252-3 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 56W (Tc) |
Rds On (Max) @ Id, Vgs | 6 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD060N03LGATMA1
RENRSAS
2500
0.58
HK KK Int'l Co.,Limited
IPD060N03LGATMA1
rene
1000
1.37
Xinnlinx Electronics Pte Ltd
IPD060N03LGATMA1
ren
4977
2.16
UCAN TRADE (HK) LIMITED
IPD060N03LGATMA1
RENESA
136407
2.95
Kunlida Electronics (HK) Limited
IPD060N03LGATMA1
RENESAS/NEC
23550
3.74
Ande Electronics Co., Limited