Part Number | IPP65R110CFDAAKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 650V TO-220-3 |
Series | Automotive, AEC-Q101, CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 1.3mA |
Gate Charge (Qg) (Max) @ Vgs | 118nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3240pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 277.8W (Tc) |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 12.7A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |
Image |
IPP65R110CFDAAKSA1
RENRSAS
7358
0.8
Shine Ever (Hong Kong) Co,.Ltd
IPP65R110CFDAAKSA1
rene
1000
0.9375
MY Group (Asia) Limited
IPP65R190CFD
ren
480
1.075
FantastIC Sourcing
IPP65R045C7
RENESA
2700
1.2125
Yingxinyuan INT'L (Group) Limited
IPP65R110CFD
RENESAS/NEC
2265
1.35
HK TWO L ELECTRONIC LIMITED