Description
IPW60R190C6, INFINEON, TO-247-3, MOSFET N-CH 600V 20.2A TO247, Discrete Semiconductor Products, FETs - Single
Part Number | IPW60R190C6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 600V 20.2A TO247 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 630µA |
Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 151W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 9.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
Hot Offer
IPW60R190C6
RENESA
3600
3.6375
Kang Da Electronics Co.
IPW60R190C6
RENESAS/NEC
2888
4.58
Xinyihui Electronic Technology Limited
IPW60R190C6 6R190C6
RENRSAS
11005
0.81
CIS Ltd (CHECK IC SOLUTION LIMITED)
IPW60R190C6
rene
3600
1.7525
Belt (HK) Electronics Co
IPW60R190C6
ren
2000
2.695
Yingxinyuan INT'L (Group) Limited