Part Number | IRF3205PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 55V 110A TO-220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 146nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3247pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 200W (Tc) |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 62A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
Hot Offer
IRF3205PBF
RENRSAS
5518
0.96
HK HEQING ELECTRONICS LIMITED
IRF3205PBF
rene
1046
2.075
HK HEQING ELECTRONICS LIMITED
IRF3205PBF
ren
9446
3.19
HK HEQING ELECTRONICS LIMITED
IRF3205PBF
RENESA
1153
4.305
HK HEQING ELECTRONICS LIMITED
IRF3205PBF
RENESAS/NEC
9349
5.42
HK HEQING ELECTRONICS LIMITED