Part Number | IRF540NPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 100V 33A TO-220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 71nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1960pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 130W (Tc) |
Rds On (Max) @ Id, Vgs | 44 mOhm @ 16A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
Hot Offer
IRF540NPBF
RENRSAS
8445
0.19
HK HEQING ELECTRONICS LIMITED
IRF540NPBF
rene
3715
1.02
HK HEQING ELECTRONICS LIMITED
IRF540NPBF
ren
6699
1.85
HK HEQING ELECTRONICS LIMITED
IRF540NPBF
RENESA
3515
2.68
HK HEQING ELECTRONICS LIMITED
IRF540NPBF
RENESAS/NEC
9999
3.51
HK FEILIDI ELECTRONIC CO., LIMITED