Part Number | IRFH8325TR2PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 30V 17A 5X6 PQFN |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 82A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.35V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2487pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.6W (Ta), 54W (Tc) |
Rds On (Max) @ Id, Vgs | 5 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PQFN (5x6) |
Package / Case | 8-PowerTDFN |
Image |
IRFH8325TR2PBF
RENRSAS
9200
0.1
HK HEQING ELECTRONICS LIMITED
IRFH8325TR2PBF
rene
16000
1.1275
Finestock Electronics HK Limited
IRFH8325TR2PBF
ren
55200
2.155
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRFH8325TR2PBF
RENESA
800
3.1825
Cicotex Electronics (HK) Limited
IRFH8325TR2PBF
RENESAS/NEC
800
4.21
Gallop Great Holdings (Hong Kong) Limited