Part Number | IRFPG50PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 1000V 6.1A TO-247AC |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 190nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 190W (Tc) |
Rds On (Max) @ Id, Vgs | 2 Ohm @ 3.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Image |
IRFPG50PBF
RENRSAS
2000
1.8
Yingxinyuan INT'L (Group) Limited
IRFPG50PBF
rene
10000
3.24
Xiefeng (HK) INT'L Electronics Limited
IRFPG50PBF
ren
24180
4.68
N&S Electronic Co., Limited
IRFPG50PBF
RENESA
11050
6.12
N&S Electronic Co., Limited
IRFPG50PBF
RENESAS/NEC
177469
7.56
Kunlida Electronics (HK) Limited