(5/5) based on 17 customer reviews
Description
DATASHEET XX = MA for MBT3904DW1T1G . MJ for MBT3904DW2T1G. M = Date Code. G = Pb Free Package. (Note: Microdot may be in either location). Q1. (1). (2). (3). (4). Jun 15, 2007 MBT3904DW1T1G . MBT3904DW1T3. MBT3904DW1T3G. MBT3906DW1T1. MBT3906DW1T1G. MBT3946DW1T1. MBT3946DW1T1G. Continuo us (A). V(BR)CEO. Min (V). hFE Min. hFE Max. fT Min. (MHz). PTM Max. (W). Package. Type. MBT3904DW1T1G . AEC. Qualified. Pb-free. Halide free. Apr 12, 2006 Page 6 of 11. Product Discontinuance #15503. Device to be discontinued. Suggested alternative. Supplier. MMPQ3904R1. MBT3904DW1T1G . Taiyo Yuden. Q1, Q2. Dual Transistors Package. MBT3904DW1T1G . Dual Transistors Package. MBT3904DW1T1G . ON Semi. R1. 2.2 k , 1/4 W Chip Resistor.
| Part Number | MBT3904DW1T1G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Arrays |
| Brand | Renesas |
| Description | TRANS 2NPN 40V 0.2A SC88 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Transistor Type | 2 NPN (Dual) |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Power - Max | 150mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Image |  |
Hot Offer
MBT3904DW1T1G
RENRSAS
100000
0.05
Hongxin Micro (Hong Kong) Electronics Co., Limited
MBT3904DW1T1G
rene
114010
0.6625
ANCHIP TECHNOLOGY CO., LIMITED
MBT3904DW1T1G
ren
12000
1.275
DA ZHONG MEI TECHNOLOGY (HONGKONG) CO., LIMITED
MBT3904DW1T1G
RENESA
600000
1.8875
YK Dragon Electronics PTE LTD.
MBT3904DW1T1G
RENESAS/NEC
150000
2.5
ADLI ELECTRONICS TECHNOLOGY LIMITED
