Part Number | N0412N-S19-AY |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 40V 100A TO-220 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5550pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta), 119W (Tc) |
Rds On (Max) @ Id, Vgs | 3.7 mOhm @ 50A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
N0412N-S19-AY
RENRSAS
6326
1
Dedicate Electronics (HK) Limited
N0412N-S19-AY
rene
1000
2.28333333333333
MY Group (Asia) Limited
N0412N
ren
6325
3.56666666666667
Dedicate Electronics (HK) Limited
N0412N
RENESA
20000
4.85
XRD Chips Technology CO.,LTD