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Description
R09DS0038EJ0100 Rev.1.00. Page 1 of 9. Apr 16, 2012. NE3516S02 . Data Sheet. N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain. R09DS0038EJ0100 Rev.1.00. Page 1 of 8. Apr 18, 2012. Data Sheet. NE3516S02 . N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain. Oct 17, 2013 California Eastern Laboratories (CEL) introduce the NE3516S02 and NE3513M04 GaAs FETs which were specifically designed to meet the Jul 4, 2013 NE3516S02 -T1D-A. UPD5739T7A-E1-A. NE3517S03-T1D-A. UPD5754T7A-E1- A. NE3520S03-T1D-A. UPC3243T7A-E1-A. UPB1051T6T-E1- NE3516S02 -A. July 2024. NE3516S02 . NE3516S02 -T1C-A. July 2024. NE3516S02 . NE3516S02 -T1D-A. July 2024. NE3517S03. NE3517S03-A. July 2024.
| Part Number | NE3516S02 |
| Brand | Renesas |
| Image |  |
NE3516S02
RENRSAS
9092
1.8
SHENZHEN NEW ENERGY ELECTRONIC TECH.,LIMITED
NE3516S02
rene
8755
2.9875
Dedicate Electronics (HK) Limited
NE3516S02
ren
1447
4.175
RX ELECTRONICS LIMITED
NE3516S02
RENESA
947
5.3625
Cicotex Electronics (HK) Limited
NE3516S02
RENESAS/NEC
1055
6.55
HK TWO L ELECTRONIC LIMITED
