Part Number | NE52418-T1-A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | Renesas |
Description | IC AMP HBT GAAS LN 4-SMINI |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5V |
Frequency - Transition | - |
Noise Figure (dB Typ @ f) | 1dB ~ 1.5dB @ 2GHz |
Gain | 14dB ~ 16dB |
Power - Max | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 3mA, 2V |
Current - Collector (Ic) (Max) | 40mA |
Operating Temperature | 125°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-82A, SOT-343 |
Supplier Device Package | 4-Super Mini Mold |
Image |
NE52418-T1-A
RENRSAS
9941
1.77
Ande Electronics Co., Limited
NE52418-T1-A
rene
6652
2.375
Dedicate Electronics (HK) Limited
NE52418-T1-A
ren
5314
2.98
Digchip Technology Co.,Limited
NE52418-T1-A
RENESA
5195
3.585
HK SEN YING TAI TECHNOLOGY CO., LIMITED
NE52418-T1
RENESAS/NEC
2484
4.19
Hong Kong In Fortune Electronics Co., Limited