(5/5) based on 2 customer reviews
Description
The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital 2010 4 1 NE55410GR VHF L 0.1 2.6 GHz . N LD Laterally Jul 26, 2006 NE55410GR . 40.4. 25. 2.1. 16. 28. 120. GR. NEC Silicon LD-MOS FETs. T. E. 9. X. NEC 55410. Drain. Gate. 4.2 MAX. 1.5 0.2. 5.7 MAX. NE55410GR . +40.4. 25. 2.1. +16. 28. 120. GR Pkg: 16 pin plastic HTSSOP. NE5500234. +32.5. 11. 1.9. +25. 4.8. 400. 34 Pkg: Compact SMT. NE5500434. + 35.0. NE55410GR . LDMOS Transistor. AMR, Cellular Repeaters. 28V. GR (16 Pin) Package. 0.4 1.6 GHz. Psat = +29 dBm. NESG250134. LDMOS Transistor. AMR
| Part Number | NE55410GR |
| Brand | Renesas |
| Image |  |
NE55410GR
RENRSAS
8500
1.38
S.E. Components
NE55410GR
rene
258
1.755
TERNARY UNION CO., LIMITED
NE55410GR
ren
41000
2.13
CIS Ltd (CHECK IC SOLUTION LIMITED)
NE55410GR-AZ
RENESA
8000
2.505
MY Group (Asia) Limited
NE55410GR-T3-AZ
RENESAS/NEC
397
2.88
RX ELECTRONICS LIMITED
