Part Number | NE66219-T1-A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | Renesas |
Description | RF TRANSISTOR NPN SOT-523 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 3.3V |
Frequency - Transition | 21GHz |
Noise Figure (dB Typ @ f) | 1.2dB @ 2GHz |
Gain | 14dB |
Power - Max | 115mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 2V |
Current - Collector (Ic) (Max) | 35mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-523 |
Supplier Device Package | SOT-523 |
Image |
NE66219-T1-A
RENRSAS
12500
1.04
XINYUN ELECTRONICS COMPANY LIMITED
NE66219-T1-A
rene
7645
2.1675
Dedicate Electronics (HK) Limited
NE66219-T1-A
ren
110000
3.295
Hong Kong Hongxinwei Technology Co., Limited
NE66219-T1-A MOS
RENESA
1615
4.4225
NEW IDEAS INDUSTRIAL CO., LIMITED
NE66219-T1-A
RENESAS/NEC
10486
5.55
Viassion Technology Co., Limited