Renesas

Description

Jun 28, 2005 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. TJ for NE68135 and NE68100 is 200 C. 3. D. Feb-97. NE68100 . SSBIP. NE64508. D. Sep-96. NE68119. SSBIP. NE64535. D. Feb-97. NE68139. SSBIP. Small Signal Bipolars Discontined Prior to 2002. 1 Apr 9, 2007 1.9 9.0 10.0 1. 15 5.5. 5. 120 100. Recessed Leads. NE851. NE68000. 4.0. 6. 5. 2.6 8.0 12.5 6. 10 9.0 10.0 100. 35. 00. Chip. . NE68100 . 2.0. NE68008(L). | . Storage Temperature - 65^2+200. 80(-00) g. Tj | c |. - | Tsia Storage Temperature 65^2+200 C. - 80(-00). | Ringo . NE68100 (L). NE68108( L). IC. TYP TYP MAX Pkg. Package. Number. (V) (pF) (GHz) (V) (mA) (ns) (ns). (ns) ( ns) (GHz) (V) (mA) (dB). (mA) Code Description. NE68100 . 10 0.2 9.0. 8 15. 0.3.