Part Number | NE85633-T1B-A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | Renesas |
Description | RF TRANSISTOR NPN SOT-23 |
Series | - |
Packaging | |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 7GHz |
Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
Gain | 11.5dB |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23 |
Image |
NE85633T1B-A
RENRSAS
1000
0.23
Bostock HK Limited
NE85630-T1
rene
83000
1.56
Yingxinyuan INT'L (Group) Limited
NE85634-T1
ren
330
2.89
HK TWO L ELECTRONIC LIMITED
NE85635
RENESA
5220
4.22
Top Electronics Co.,
NE85630-T1
RENESAS/NEC
8000
5.55
MY Group (Asia) Limited