Part Number | NE856M02-T1-AZ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | Renesas |
Description | RF TRANSISTOR NPN SOT-89 |
Series | - |
Packaging | |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 6.5GHz |
Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
Gain | 12dB |
Power - Max | 1.2W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Supplier Device Package | SOT-89 |
Image |
NE856M02-T1-AZ
RENRSAS
6772
1.66
Dedicate Electronics (HK) Limited
NE856M02-T1-AZ
rene
9350
2.8325
Digchip Technology Co.,Limited
NE856M02
ren
7739
4.005
Dedicate Electronics (HK) Limited
NE856M02-AZ
RENESA
5964
5.1775
MY Group (Asia) Limited
NE856M02-T1-AZ/RF
RENESAS/NEC
5745
6.35
Digchip Technology Co.,Limited