Part Number | NESG2107M33-T3-A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | Renesas |
Description | TRANS NPN 2GHZ M33 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5V |
Frequency - Transition | 10GHz |
Noise Figure (dB Typ @ f) | 0.9dB ~ 1.5dB @ 2GHz |
Gain | 7dB ~ 10dB |
Power - Max | 130mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 5mA, 1V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, Flat Leads |
Supplier Device Package | 3-SuperMiniMold (M33) |
Image |
NESG2107M33-T3-A
RENRSAS
1400
0.74
HK HEQING ELECTRONICS LIMITED
NESG2107M33-T3-A
rene
77796
1.9675
Heisener Electronics Limited
NESG2107M33-T3-A
ren
193492
3.195
Cicotex Electronics (HK) Limited
NESG2107M33-T3-A
RENESA
28983
4.4225
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
NESG2107M33-T3-A
RENESAS/NEC
10870
5.65
Yingxinyuan INT'L (Group) Limited