Part Number | NID9N05ACLT4G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 52V 9A LL DPAK-3 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 52V |
Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 3V, 12V |
Vgs(th) (Max) @ Id | 2.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 40V |
Vgs (Max) | ±15V |
FET Feature | - |
Power Dissipation (Max) | 1.74W (Ta) |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 9A, 12V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
NID9N05ACLT4G
RENRSAS
35845
1.14
CIS Ltd (CHECK IC SOLUTION LIMITED)
NID9N05ACLT4G
rene
7500
1.7375
TIANHAO INDUSTRIAL CO., LIMITED
NID9N05ACLT4G
ren
11400
2.335
VIPOWER TECHNOLOGY LIMITED
NID9N05ACLT4G
RENESA
269
2.9325
Guofanghui (Hong Kong) Technology Co., Limited
NID9N05ACLT4G**
RENESAS/NEC
48800
3.53
Ande Electronics Co., Limited