Part Number | NP36P04SDG-E1-AY |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET P-CH 40V 36A TO-252 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.2W (Ta), 56W (Tc) |
Rds On (Max) @ Id, Vgs | 17 mOhm @ 18A, 10V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252 (MP-3ZK) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
NP36P04SDG-E1-AY
RENRSAS
16000
0.56
Finestock Electronics HK Limited
NP36P04SDG-E1-AY
rene
6980
1.25
ONSTAR ELECTRONICS CO., LIMITED
NP36P04SDG-E1-AY
ren
25245
1.94
CIS Ltd (CHECK IC SOLUTION LIMITED)
NP36P04SDG-E1-AY
RENESA
10026
2.63
F-power Electronics Co
NP36P04SDG-E1-AY
RENESAS/NEC
100
3.32
Yingxinyuan INT'L (Group) Limited