Part Number | NP36P06KDG-E1-AY |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET P-CH 60V 36A TO-263 |
Series | - |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta), 56W (Tc) |
Rds On (Max) @ Id, Vgs | 29.5 mOhm @ 18A, 10V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
NP36P06KDG-E1-AY
RENRSAS
361
1.71
Acon Electronics Limited
NP36P06KDG-E1-AY
rene
8741
2.73
ONSTAR ELECTRONICS CO., LIMITED
NP36P06KDG-E1-AY
ren
11367
3.75
CIS Ltd (CHECK IC SOLUTION LIMITED)
NP36P06KDG-E1-AY
RENESA
85606
4.77
Kunlida Electronics (HK) Limited
NP36P06KDG-E1-AY
RENESAS/NEC
688
5.79
RX ELECTRONICS LIMITED