Part Number | NP83P06PDG-E1-AY |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET P-CH 60V 83A TO-263 |
Series | - |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 190nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 10100pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta), 150W (Tc) |
Rds On (Max) @ Id, Vgs | 8.8 mOhm @ 41.5A, 10V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
NP83P06PDG-E1-AY
RENRSAS
8915
0.44
Acon Electronics Limited
NP83P06PDG-E1-AY
rene
9110
1.415
CJ ELECTRONICS DISTRIBUTORS LTD
NP83P06PDG-E1-AY
ren
9698
2.39
Yingxinyuan INT'L (Group) Limited
NP83P06PDG-E1-AY
RENESA
6275
3.365
WIN AND WIN ELECTRONICS LIMITED
NP83P06PDG-E1/-AY/
RENESAS/NEC
6051
4.34
Cicotex Electronics (HK) Limited