Part Number | NP90N04VUG-E1-AY |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH TO-252 |
Series | - |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 135nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7500pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.2W (Ta), 105W (Tc) |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 45A, 10V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
NP90N04VUG-E1-AY
RENRSAS
9237
0.22
ShenZhen HengBin Technology Co.,Limited
NP90N04VUG-E1-AY
rene
7991
1.0275
MY Group (Asia) Limited
NP90N04VUG-E1-AY
ren
3617
1.835
HK SEN YING TAI TECHNOLOGY CO., LIMITED
NP90N03VHG
RENESA
3323
2.6425
Ande Electronics Co., Limited
NP90N04VUG(1)-E1-AY
RENESAS/NEC
9183
3.45
HK TWO L ELECTRONIC LIMITED