Part Number | NTD3055L104-1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 60V 12A IPAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 25V |
Vgs (Max) | ±15V |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta), 48W (Tj) |
Rds On (Max) @ Id, Vgs | 104 mOhm @ 6A, 5V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
NTD3055L104-1G
RENRSAS
35800
1
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NTD3055L104-1G
rene
9000
2.2075
SUMMER TECH(HK) LIMITED
NTD3055L104-1G
ren
200000
3.415
Shenzhen WTX Capacitor Co., Ltd.
NTD3055L104-1G
RENESA
2605
4.6225
LANTEK INT'L TRADE LIMITED
NTD3055L104-1G
RENESAS/NEC
4000
5.83
Kinda Components Limited