Part Number | NTHD4N02FT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 20V 2.9A CHIPFET |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.9A (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
Vgs (Max) | - |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 910mW (Tj) |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 2.9A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | ChipFET |
Package / Case | 8-SMD, Flat Lead |
Image |
NTHD4N02FT1G
RENRSAS
10000
0.42
Shenzhen Kaidike Electronics Co., Ltd
NTHD4N02FT1G
rene
2300
1.455
HK HEQING ELECTRONICS LIMITED
NTHD4N02FT1G
ren
100000
2.49
Hong Kong Shun Ye Electronics Co., Limited
NTHD4N02FT1G
RENESA
130
3.525
Seven-Two Tech (HK) Co., Limited
NTHD4N02FT1G
RENESAS/NEC
35800
4.56
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED