Part Number | NTLJS3113PT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET P-CH 20V 3.5A 6-WFDN |
Series | µCool |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1329pF @ 16V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 3A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-WDFN (2x2) |
Package / Case | 6-WDFN Exposed Pad |
Image |
NTLJS3113PT1G
RENRSAS
5000000
1.13
Hongkong Shengshi Electronics Limited
NTLJS3113PT1G
rene
1000
1.9375
Kang Da Electronics Co.
NTLJS3113PT1G
ren
35800
2.745
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NTLJS3113PT1G
RENESA
8966
3.5525
ONSTAR ELECTRONICS CO., LIMITED
NTLJS3113PT1G
RENESAS/NEC
6000
4.36
Riking Technology (HK) Co., Limited