Part Number | R6004ENX |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 600V 4A TO220 |
Series | - |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Rds On (Max) @ Id, Vgs | 980 mOhm @ 1.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FM |
Package / Case | TO-220-3 Full Pack |
Image |
R6004ENX
RENRSAS
5914
0.46
HK HEQING ELECTRONICS LIMITED
R6004ENX
rene
4499
1.78
SUNTOP SEMICONDUCTOR CO., LIMITED
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ONSTAR ELECTRONICS CO., LIMITED
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Z.H.T TECHNOLOGY HK LIMITED
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YTSX (INT'L) GROUP CO., LIMITED