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Description
DATASHEET BM1Q0XX series Quasi-Resonant converter Technical Design. R 1. 10k. R6. 47k. 3W. D3. FRD. 800V 0.5A. Q1. R8008ANX . R7. 10. R9. 100k. D5. RF05VA 2S. R8008ANX (N) 140. R8010ANX (N) 141. TO-220FM. Dual. Type. 10 500. SP8K80 (N+N) 136. SOP8. B15. Power Devices. Power Transistors www.rohm. com. R8008ANX (N) 140. R8010ANX (N) 141. TO-220FM. Dual. Type. 10 500. SP8K80 (N+N) 136. SOP8. B15 www.rohm.com.cn. MOSFET. B. R8008ANX . 800. 8. 50. 0.79. 39. R8010ANX. 800. 10. 40. 0.43. 62. TO-3PF. R6015ANZ. 600. 15. 110. 0.23. 50. R6020ANZ. 600. 20. 120. 0.17. 65. R6025ANZ.
| Part Number | R8008ANX |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Renesas |
| Description | MOSFET N-CH 800V 8A TO-220FM |
| Series | - |
| Packaging | Bulk |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.03 Ohm @ 4A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FM |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
R8008ANX
RENRSAS
1674
0.62
HK HEQING ELECTRONICS LIMITED
R8008ANX
rene
180
1.335
SUNTOP SEMICONDUCTOR CO., LIMITED
R8008ANX
ren
11500
2.05
CIS Ltd (CHECK IC SOLUTION LIMITED)
R8008ANX
RENESA
797
2.765
WIN AND WIN ELECTRONICS LIMITED
R8008ANX
RENESAS/NEC
293562
3.48
Cicotex Electronics (HK) Limited
