Rated 
(5/5) based on 7 customer reviews
(5/5) based on 7 customer reviews
Description
Apr 19, 2012 Features. Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage. VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, 1.1 Structure. The IGBT combines in it all the advantages of the bipolar and MOS field effect transistor. As can be seen from the structures shown below, the only
| Part Number | RJH60D3 |
| Brand | Renesas |
| Image |  |
Lowest Price: $0.56
Highest Price: $4.48
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RJH60D3
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SeeMe Technology Co., LTD
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RJH60D3
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rene
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Dedicate Electronics (HK) Limited
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RJH60D3
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ren
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CIS Ltd (CHECK IC SOLUTION LIMITED)
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RJH60D3
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RENESA
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OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
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RJH60D3
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ATLANTIC TECHNOLOGY LIMITED
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