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Description
R07DS0076EJ0200 Rev.2.00. Page 1 of 6. Apr 09, 2013. Preliminary Datasheet. RJK0651DPB . 60V, 25A, 14m max. Silicon N Channel Power MOS FET. Dec 29, 2014 RENESAS ELECTRONIC, RJK0651DPB . 19. 2. Q2, Q4. XSTR, POWER MOSFET LFPAK. RENESAS ELECTRONIC, RJK0652DPB. 20. 1. RS1. Renasas RJK0651DPB . Q4,Q6. 0. Not installed (LFPAK). Renasas RJK0653DPB . D1,D2. 2. 100V Schottky Diode (POWERDI 123). Diodes Incorporated DFLS C9. 22 F. C10. 22 F. L1. 4.7 H. R3. C1. 2.2 F. C2. 2.2 F. 158k. R4. 34.8k. 0.1 F . 0.022 F. 2.2 F. VOUT. 5V, 5A. N1. L1 = XAL8080-472. N1 = RJK0651DPB M1, M2: RENESAS RJK0651DPB 60Vds. M3, M4: RENESAS RJK0451DPB 40Vds. C1: NIPPON CHEMICON EMZA800ADA470MJAOG. COUT: SUNCON
| Part Number | RJK0651DPB |
| Brand | Renesas |
| Image |  |
RJK0651DPB
RENRSAS
88085
0.35
Kunlida Electronics (HK) Limited
RJK0651DPB
rene
1000
2.0425
Xinnlinx Electronics Pte Ltd
RJK0651DPB
ren
5000
3.735
SEMICON INTERNATIONAL (HONG KONG) CO., LIMITED
RJK0651DPB
RENESA
14789
5.4275
CIS Ltd (CHECK IC SOLUTION LIMITED)
RJK0651DPB
RENESAS/NEC
222043
7.12
Cicotex Electronics (HK) Limited
