Part Number | RJK2009DPM-00#T0 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 200V 40A TO3PFM |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 60W (Tc) |
Rds On (Max) @ Id, Vgs | 36 mOhm @ 20A, 10V |
Operating Temperature | - |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PFM |
Package / Case | TO-3PFM, SC-93-3 |
Image |
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1260
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