Part Number | RJP4301APP-M0#T2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Renesas |
Description | IGBT 430V TO200FL |
Series | - |
Packaging | Tube |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 430V |
Current - Collector (Ic) (Max) | - |
Current - Collector Pulsed (Icm) | 200A |
Vce(on) (Max) @ Vge, Ic | 10V @ 26V, 200A |
Power - Max | 30W |
Switching Energy | - |
Input Type | Standard |
Gate Charge | - |
Td (on/off) @ 25°C | 50ns/100ns |
Test Condition | 300V, 200A, 30 Ohm, 26V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Supplier Device Package | TO-220FL |
Image |
RJP4301APP-M0-T2
RENRSAS
3150
1.67
Dedicate Electronics (HK) Limited
RJP4301APP-M0#T2
rene
1498
2.5675
ONSTAR ELECTRONICS CO., LIMITED
RJP4301APP-M0#T2
ren
8244
3.465
MY Group (Asia) Limited
RJP4301APP-M0#T2
RENESA
4294
4.3625
INNOVO ELEC TECH (HK) CO., LIMITED
RJP4301
RENESAS/NEC
1318
5.26
Nosin (HK) Electronics Co.