Description
Jun 29, 2011 RQA0009TXDQS . Silicon N-Channel MOS FET. Features. High Output Power, High Gain, High Efficiency. Pout = +37.8 dBm, Linear Gain = 18 2011 6 29 RQA0009TXDQS . . R07DS0492JJ0200 Rev.2.00. Page 3 of 21. 2011.06. 29. . VGS (V). . C iss (p. F. ).
Part Number | RQA0009TXDQS |
Brand | Renesas |
Image |
RQA0009TXDQS
RENRSAS
714
0.26
HK HEQING ELECTRONICS LIMITED
RQA0009TXDQS
rene
4500
1.17
Lansheng Technology Co.,Ltd.
RQA0009TXDQS
ren
2000
2.08
Quantum Chip technology Co., Limited
RQA0009TXDQS
RENESA
45000
2.99
S.E. Components
RQA0009TXDQS
RENESAS/NEC
1060
3.9
Yingxinyuan INT'L (Group) Limited