(4/5) based on 10 customer reviews
Description
Jan 10, 2014 RQJ0303PGDQA . Silicon P Channel MOS FET. Power Switching. Features. Low on-resistance. RDS(on) = 54 m typ (VGS = 10 V, ID = 1.6 Product information for EU RoHS and China RoHS. China RoHS. Part Name. RQJ0303PGDQA . Orderable Part. Number. RQJ0303PGDQA #H6. EU RoHS. RENASAS, RQJ0303PGDQA #H6. 25. 1. Q13. XSTR, NPN, SOT223. CENTRAL SEMI, CZT5551 TR. 26. 16. R1-R12, R49, R56, R64, R80. RES., CHIP, 100 1% C2FILTER. C1FILTER. DC2. DC1. 100nF. 100. 3.3k. 1M. 1M. 1M. 10k. 100. NTC2 . 100nF. 3.3k. RQJ0303PGDQA . RQJ0303PGDQA . 475. 33. PDZ7.5B. PDZ7.5B. C2FILTER. C1FILTER. DC2. DC1. 100nF. 100. 3.3k. 1M. 1M. 1M. 10k. 100. NTC2 . 100nF. 3.3k. RQJ0303PGDQA . RQJ0303PGDQA . 475. 33. PDZ7.5B. PDZ7.5B.
| Part Number | RQJ0303PGDQA |
| Brand | Renesas |
| Image |  |
RQJ0303PGDQA
RENRSAS
5000000
0.01
Hongkong Shengshi Electronics Limited
RQJ0303PGDQA
rene
360000
1.045
GITSAMDAK ELECTRONICS (HK) CO., LIMITED
RQJ0303PGDQA
ren
200000
2.08
TERNARY UNION CO., LIMITED
RQJ0303PGDQA
RENESA
85000
3.115
ATP ELECTRONIC TECHNOLOGY CO., LIMITED
RQJ0303PGDQA
RENESAS/NEC
200000
4.15
Shenzhen WTX Capacitor Co., Ltd.
