Part Number | RQJ0303PGDQA#H6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET P-CH 30V 3.3A 3MPAK |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 625pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 800mW (Ta) |
Rds On (Max) @ Id, Vgs | 68 mOhm @ 1.6A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 3-MPAK |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
RQJ0303PGDQA#H6
RENRSAS
6000
0.2
MY Group (Asia) Limited
RQJ0304DQDQATL-H
rene
3004
1.315
Pacific Corporation
RQJ0301HGDQSTL-E
ren
3263
2.43
Yingxinyuan INT'L (Group) Limited
RQJ0304DQDQA#H6
RENESA
826
3.545
Kang Da Electronics Co.
RQJ0301HGDQS
RENESAS/NEC
7545
4.66
Belt (HK) Electronics Co