Part Number | SI2343DST1E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET P-CH 30V 3.1A SOT23-3 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 750mW (Ta) |
Rds On (Max) @ Id, Vgs | 53 mOhm @ 4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
SI2343DS-T1-E3
RENRSAS
6146
0.09
HK HEQING ELECTRONICS LIMITED
SI2343DS-T1-E3
rene
3186
0.64
Gallop Great Holdings (Hong Kong) Limited
SI2343DS-T1-E3
ren
861
1.19
Shenzhen WTX Capacitor Co., Ltd.
SI2343DS-T1-E3
RENESA
3701
1.74
Cicotex Electronics (HK) Limited
SI2343DS-T1-E3
RENESAS/NEC
2015
2.29
Yingxinyuan INT'L (Group) Limited